Discrete Semiconductor Products
FDD86110
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 100 V, 50 A, 0.0085 OHM, TO-252 (DPAK), SURFACE MOUNT
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Discrete Semiconductor Products
FDD86110
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 100 V, 50 A, 0.0085 OHM, TO-252 (DPAK), SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDD86110 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12.5 A, 50 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 35 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2265 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 3.1 W, 127 W |
| Rds On (Max) @ Id, Vgs | 10.2 mOhm |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.38 | |
| 10 | $ 2.21 | |||
| 100 | $ 1.54 | |||
| 500 | $ 1.25 | |||
| 1000 | $ 1.16 | |||
| Digi-Reel® | 1 | $ 3.38 | ||
| 10 | $ 2.21 | |||
| 100 | $ 1.54 | |||
| 500 | $ 1.25 | |||
| 1000 | $ 1.16 | |||
| Tape & Reel (TR) | 2500 | $ 1.11 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 3.64 | |
| 10 | $ 2.71 | |||
| 25 | $ 2.56 | |||
| 50 | $ 2.41 | |||
| 100 | $ 2.26 | |||
| ON Semiconductor | N/A | 1 | $ 1.02 | |
Description
General part information
FDD86110 Series
This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Documents
Technical documentation and resources