FDD86102LZ Series

N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 35 A, 22.5 mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 35 A, 22.5 mΩ

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDD86102	20 V	-55 °C	150 °C	24 mOhm	1035 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	TO-252AA	8 A 36 A	19 nC	6 V 10 V	N-Channel	100 V	4 V	Surface Mount
ON Semiconductor FDD86102LZ	20 V	-55 °C	150 °C	22.5 mOhm		DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	TO-252AA	8 A 35 A		4.5 V 10 V	N-Channel	100 V	3 V	Surface Mount	3.1 W 54 W	26 nC
ON Semiconductor FDD86110	20 V	-55 °C	150 °C	10.2 mOhm	2265 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	TO-252AA	12.5 A 50 A		6 V 10 V	N-Channel	100 V	4 V	Surface Mount	3.1 W 127 W	35 nC

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 35 A, 22.5 mΩ

Key Features

• Max rDS(on)= 24 mΩ at VGS= 10 V, ID= 8 A

• Max rDS(on)= 38 mΩ at VGS= 6 V, ID= 6 A

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability in a widely used surface mount package

• Very low Qgand Qgdcompared to competing trench technologies

• Fast switching speed

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.