Specification	FDD86102

Current - Continuous Drain (Id) @ 25°C	8 A, 36 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	1035 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDD86102LZ Series

N-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 100 V, 35 A, 22.5 mΩ

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDD86102	20 V	-55 °C	150 °C	24 mOhm	1035 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	TO-252AA	8 A 36 A	19 nC	6 V 10 V	N-Channel	100 V	4 V	Surface Mount
ON Semiconductor FDD86102LZ	20 V	-55 °C	150 °C	22.5 mOhm		DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	TO-252AA	8 A 35 A		4.5 V 10 V	N-Channel	100 V	3 V	Surface Mount	3.1 W 54 W	26 nC
ON Semiconductor FDD86110	20 V	-55 °C	150 °C	10.2 mOhm	2265 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	TO-252AA	12.5 A 50 A		6 V 10 V	N-Channel	100 V	4 V	Surface Mount	3.1 W 127 W	35 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.41
		10	$ 1.55
		100	$ 1.06
		500	$ 0.85
		1000	$ 0.78
	Digi-Reel®	1	$ 2.41
		10	$ 1.55
		100	$ 1.06
		500	$ 0.85
		1000	$ 0.78
	Tape & Reel (TR)	2500	$ 0.71
		5000	$ 0.70
Newark	Each (Supplied on Cut Tape)	1	$ 2.55
		10	$ 1.88
		25	$ 1.74
		50	$ 1.59
		100	$ 1.44
ON Semiconductor	N/A	1	$ 0.65

Description

General part information

FDD86102LZ Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.

Documents

Technical documentation and resources

Package Drawing-369AS-DPAK3 6.10x6.54x2.29, 4.57P

Package Drawing

Datasheet

Technical Data Sheet EN

Datasheet

Technical Data Sheet EN

Datasheet