Discrete Semiconductor Products
SCT3030KLGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 72 A, 1.2 KV, 0.03 OHM, TO-247N
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Discrete Semiconductor Products
SCT3030KLGC11
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 72 A, 1.2 KV, 0.03 OHM, TO-247N
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3030KLGC11 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 72 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 131 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2222 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 339 W |
| Rds On (Max) @ Id, Vgs | 39 mOhm |
| Supplier Device Package | TO-247N |
| Vgs(th) (Max) @ Id | 5.6 V |
Pricing
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Description
General part information
SCT3030 Series
SCT3030AR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, motor drives, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
Documents
Technical documentation and resources
