Specification	SCT3030KLHRC11

Current - Continuous Drain (Id) @ 25°C	72 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	131 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2222 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	339 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	39 mOhm
Supplier Device Package	TO-247N
Vgs(th) (Max) @ Id	5.6 V

SCT3030 Series

650V, 70A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature	Vgs(th) (Max) @ Id	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Qualification	Grade	Technology
Rohm Semiconductor SCT3030ALGC11	262 W	18 V	650 V	175 °C	5.6 V	N-Channel	TO-247-3	104 nC	TO-247N	70 A	Through Hole	1526 pF	39 mOhm
Rohm Semiconductor SCT3030AW7TL	267 W		650 V	175 °C	5.6 V	N-Channel	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	104 nC	TO-263-7	70 A	Surface Mount	1526 pF	39 mOhm
Rohm Semiconductor SCT3030KLGC11	339 W	18 V	1.2 kV	175 °C	5.6 V	N-Channel	TO-247-3		TO-247N	72 A	Through Hole	2222 pF	39 mOhm	131 nC
Rohm Semiconductor SCT3030KLHRC11		18 V	1.2 kV	175 °C	5.6 V	N-Channel	TO-247-3		TO-247N	72 A	Through Hole	2222 pF	39 mOhm	131 nC	339 W	AEC-Q101	Automotive
Rohm Semiconductor SCT3030ARC14		18 V	650 V	175 °C	5.6 V	N-Channel	TO-247-4	104 nC	TO-247-4L	70 A	Through Hole	1526 pF	39 mOhm		262 W
Rohm Semiconductor SCT3030ARC15		18 V	650 V	175 °C	5.6 V	N-Channel	TO-247-4	104 nC	TO-247-4L	70 A	Through Hole	1526 pF	39 mOhm		262 W			MOSFET (Metal Oxide)
Rohm Semiconductor SCT3030ARHRC15		18 V	650 V	175 °C	5.6 V	N-Channel	TO-247-4	104 nC	TO-247-4L	70 A	Through Hole	1526 pF	39 mOhm		262 W	AEC-Q101	Automotive	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	579	$ 59.62
	Tube	1	$ 57.36
Newark	Each	1	$ 59.65
		5	$ 59.65
		10	$ 59.65
		25	$ 59.64
		50	$ 59.64
		100	$ 59.05

Description

General part information

SCT3030 Series

SCT3030AR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, motor drives, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.

Documents

Technical documentation and resources

SCT3030KLHRC11

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SCT3030KLHRC11

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Technical Specifications

SCT3030 Series

Pricing

Description

SCT3030 Series

Documents

Judgment Criteria of Thermal Evaluation

How to Use PSIM Models

LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units

Importance of Probe Calibration When Measuring Power: Deskew

About Flammability of Materials

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

PCB Layout Thermal Design Guide

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Calculating Power Loss from Measured Waveforms

SCT3030KLHR Data Sheet

How to Suppress the Parallel Drive Oscillation in SiC Modules

Notes on Gate Drive Voltage Setting and Linear Mode Application of SiC MOSFET

How to Use PLECS Models

800V Three-Phase Output LLC DC/DC Resonant Converter

Part Explanation

Precautions for Thermal Resistance of Insulation Sheet

Gate-Source Voltage Surge Suppression Methods

Basics and Design Guidelines for Gate Drive Circuits

Types and Features of Transistors

Precautions during gate-source voltage measurement for SiC MOSFET

Design Method for Comparator-less Miller Clamp Circuits

What is a Thermal Model? (SiC Power Device)

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Application Note for SiC Power Devices and Modules

About Export Administration Regulations (EAR)

Basics of Thermal Resistance and Heat Dissipation

Package Dimensions

How to Create Symbols for PSpice Models

Measurement Method and Usage of Thermal Resistance RthJC

How to Use Thermal Models

Compliance of the ELV directive

Notes for Calculating Power Consumption:Static Operation

Calculation of Power Dissipation in Switching Circuit

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Gate-source voltage behaviour in a bridge configuration

Oscillation countermeasures for MOSFETs in parallel

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

How to Use LTspice&reg; Models: Tips for Improving Convergence

How to measure the oscillation occurs between parallel-connected devices

Thermal Resistance Measurement Method for SiC MOSFET

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Impedance Characteristics of Bypass Capacitor

5kW High-Efficiency Fan-less Inverter

What Is Thermal Design

Anti-Whisker formation

Explanation for Marking - TO-247N SiC_Marking-e.pdf

Method for Monitoring Switching Waveform

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Condition of Soldering

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Solving the challenges of driving SiC MOSFETs with new packaging developments

4 Steps for Successful Thermal Designing of Power Devices

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Precautions When Measuring the Rear of the Package with a Thermocouple

SiC MOSFET Layout Design Considerations

Snubber circuit design methods for SiC MOSFET

Two-Resistor Model for Thermal Simulation

Notes for Temperature Measurement Using Thermocouples

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

Taping Information

How to Use LTspice&reg; Models

SCT PPAP Statement

SCT3030 Series

How to Use LTspice® Models: Tips for Improving Convergence

How to Use LTspice® Models