Discrete Semiconductor Products
SCT3030AW7TL
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 70 A, 650 V, 0.03 OHM, TO-263 (D2PAK)
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Discrete Semiconductor Products
SCT3030AW7TL
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 70 A, 650 V, 0.03 OHM, TO-263 (D2PAK)
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3030AW7TL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70 A |
| Drain to Source Voltage (Vdss) | 650 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1526 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | TO-263CA, D2PAK (7 Leads + Tab), TO-263-8 |
| Power Dissipation (Max) | 267 W |
| Rds On (Max) @ Id, Vgs | 39 mOhm |
| Supplier Device Package | TO-263-7 |
| Vgs(th) (Max) @ Id | 5.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 37.07 | |
| 10 | $ 27.51 | |||
| 100 | $ 24.42 | |||
| Digi-Reel® | 1 | $ 38.08 | ||
| 10 | $ 33.84 | |||
| 100 | $ 29.60 | |||
| N/A | 407 | $ 29.89 | ||
| Tape & Reel (TR) | 1000 | $ 24.42 | ||
| Mouser | N/A | 1 | $ 30.71 | |
| 10 | $ 25.31 | |||
| 25 | $ 25.30 | |||
| 50 | $ 25.28 | |||
| 100 | $ 24.42 | |||
| 500 | $ 24.40 | |||
| 1000 | $ 24.37 | |||
| Newark | Each | 1 | $ 32.61 | |
| 5 | $ 29.47 | |||
| 10 | $ 26.79 | |||
| 25 | $ 26.30 | |||
| 50 | $ 26.29 | |||
| 100 | $ 25.40 | |||
| 250 | $ 25.39 | |||
Description
General part information
SCT3030 Series
SCT3030AR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, motor drives, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
Documents
Technical documentation and resources
