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LITTELFUSE Q4008DH3RP
Discrete Semiconductor Products

STD16N50M2

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STMicroelectronics

N-CHANNEL 500 V, 0.24 OHM TYP., 13 A MDMESH M2 POWER MOSFET IN A DPAK PACKAGE

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LITTELFUSE Q4008DH3RP
Discrete Semiconductor Products

STD16N50M2

Active
STMicroelectronics

N-CHANNEL 500 V, 0.24 OHM TYP., 13 A MDMESH M2 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD16N50M2
Current - Continuous Drain (Id) @ 25°C13 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]19.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]710 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)110 W
Rds On (Max) @ Id, Vgs280 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.57
10$ 1.31
100$ 1.04
500$ 0.88
1000$ 0.75
Digi-Reel® 1$ 1.57
10$ 1.31
100$ 1.04
500$ 0.88
1000$ 0.75
N/A 3372$ 2.21
Tape & Reel (TR) 2500$ 0.69

Description

General part information

STD16 Series

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.