Discrete Semiconductor Products

STD16N60M6

Active

STMicroelectronics

N-CHANNEL 600 V, 0.260 OHM TYP., 12 A MDMESH M6 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

STD16N60M6

Active

STMicroelectronics

N-CHANNEL 600 V, 0.260 OHM TYP., 12 A MDMESH M6 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD16N60M6

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	575 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	320 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

STD16 Series

N-channel 600 V, 280 mOhm typ., 12 A MDmesh M2 Power MOSFET in a DPAK package

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Power Dissipation (Max)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STD16NF25	250 V	DPAK	150 °C	-55 °C	Surface Mount	10 V	235 mOhm	4 V	18 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	14 A	N-Channel	680 pF	MOSFET (Metal Oxide)	100 W
STMicroelectronics STD16N50M2	500 V	DPAK	150 °C	-55 °C	Surface Mount	10 V	280 mOhm	4 V	19.5 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	25 V	13 A	N-Channel	710 pF	MOSFET (Metal Oxide)	110 W
STMicroelectronics STD16N60M6	600 V	TO-252 (DPAK)	150 °C	-55 °C	Surface Mount	10 V	320 mOhm	4.75 V	16.7 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	25 V	12 A	N-Channel	575 pF	MOSFET (Metal Oxide)	110 W
STMicroelectronics STD16N60M2	600 V	DPAK			Surface Mount	10 V	320 mOhm	4 V		DPAK (2 Leads + Tab) SC-63 TO-252-3	25 V	12 A	N-Channel	700 pF	MOSFET (Metal Oxide)	110 W	150 °C	19 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.13
		10	$ 1.77
		100	$ 1.41
		500	$ 1.19
		1000	$ 1.01
	Digi-Reel®	1	$ 2.13
		10	$ 1.77
		100	$ 1.41
		500	$ 1.19
		1000	$ 1.01
	N/A	0	$ 2.44
	Tape & Reel (TR)	2500	$ 0.96
		5000	$ 0.93

Description

General part information

STD16 Series

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

Documents

Technical documentation and resources