STD16 Series

N-channel 600 V, 280 mOhm typ., 12 A MDmesh M2 Power MOSFET in a DPAK package

Catalog

N-channel 600 V, 280 mOhm typ., 12 A MDmesh M2 Power MOSFET in a DPAK package

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Power Dissipation (Max)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STD16NF25	250 V	DPAK	150 °C	-55 °C	Surface Mount	10 V	235 mOhm	4 V	18 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	14 A	N-Channel	680 pF	MOSFET (Metal Oxide)	100 W
STMicroelectronics STD16N50M2	500 V	DPAK	150 °C	-55 °C	Surface Mount	10 V	280 mOhm	4 V	19.5 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	25 V	13 A	N-Channel	710 pF	MOSFET (Metal Oxide)	110 W
STMicroelectronics STD16N60M6	600 V	TO-252 (DPAK)	150 °C	-55 °C	Surface Mount	10 V	320 mOhm	4.75 V	16.7 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	25 V	12 A	N-Channel	575 pF	MOSFET (Metal Oxide)	110 W
STMicroelectronics STD16N60M2	600 V	DPAK			Surface Mount	10 V	320 mOhm	4 V		DPAK (2 Leads + Tab) SC-63 TO-252-3	25 V	12 A	N-Channel	700 pF	MOSFET (Metal Oxide)	110 W	150 °C	19 nC

Catalog

N-channel 600 V, 280 mOhm typ., 12 A MDmesh M2 Power MOSFET in a DPAK package

Description

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.