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STP46N60M6
Discrete Semiconductor Products

STGP20H65DFB2

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STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 20 A HIGH SPEED HB2 SERIES IGBT IN A TO-220 PACKAGE

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Search across all available documentation for this part.

DocumentsSTGP20H65DFB2 | DatasheetProduct Change Notice EN+13
STP46N60M6
Discrete Semiconductor Products

STGP20H65DFB2

Active
STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 20 A HIGH SPEED HB2 SERIES IGBT IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsSTGP20H65DFB2 | DatasheetProduct Change Notice EN+13

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGP20H65DFB2
Current - Collector (Ic) (Max) [Max]40 A
Current - Collector Pulsed (Icm)60 A
Gate Charge56 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power - Max [Max]147 W
Reverse Recovery Time (trr)215 ns
Supplier Device PackageTO-220
Switching Energy265 µJ, 214 µJ
Td (on/off) @ 25°C [custom]78.8 ns
Td (on/off) @ 25°C [custom]16 ns
Test Condition20 A, 10 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1000$ 0.88
N/A 0$ 0.82
NewarkEach 1$ 2.29
10$ 1.45
100$ 1.35
500$ 1.32
1000$ 1.31

Description

General part information

STGP20 Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation.