Discrete Semiconductor Products
STGP20M65DF2
ActiveSTMicroelectronics
IGBTS TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 20 A LOW LOSS
Discrete Semiconductor Products
STGP20M65DF2
ActiveSTMicroelectronics
IGBTS TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 20 A LOW LOSS
Technical Specifications
Parameters and characteristics for this part
| Specification | STGP20M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Gate Charge | 63 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 166 W |
| Reverse Recovery Time (trr) | 166 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 560 µJ, 140 µJ |
| Td (on/off) @ 25°C [Max] | 108 ns |
| Td (on/off) @ 25°C [Min] | 26 ns |
| Test Condition | 20 A, 12 Ohm, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic [Max] | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGP20 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation.
