Discrete Semiconductor Products
STGP10M65DF2
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 10 A LOW LOSS
Discrete Semiconductor Products
STGP10M65DF2
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 10 A LOW LOSS
Technical Specifications
Parameters and characteristics for this part
| Specification | STGP10M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 20 A |
| Current - Collector Pulsed (Icm) | 40 A |
| Gate Charge | 28 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 115 W |
| Reverse Recovery Time (trr) | 96 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 120 µJ, 270 µJ |
| Td (on/off) @ 25°C [custom] | 91 ns |
| Td (on/off) @ 25°C [custom] | 19 ns |
| Test Condition | 400 V, 22 Ohm, 10 A, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGP10 Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.