STGP10NC60KD
ActiveIGBT SINGLE TRANSISTOR, 600 V, 20 A, 65 W, 2.2V, TO-220
STGP10NC60KD
ActiveIGBT SINGLE TRANSISTOR, 600 V, 20 A, 65 W, 2.2V, TO-220
Technical Specifications
Parameters and characteristics for this part
| Specification | STGP10NC60KD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 20 A |
| Current - Collector Pulsed (Icm) | 30 A |
| Gate Charge | 19 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 65 W |
| Reverse Recovery Time (trr) | 22 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 55 µJ, 85 µJ |
| Td (on/off) @ 25°C | 72 ns, 17 ns |
| Test Condition | 10 Ohm, 15 V, 390 V, 5 A |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGP10 Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources