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TO-220-3
Discrete Semiconductor Products

STGP10H60DF

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 10 A HIGH SPEED

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TO-220-3
Discrete Semiconductor Products

STGP10H60DF

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H SERIES 600 V, 10 A HIGH SPEED

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGP10H60DF
Current - Collector (Ic) (Max) [Max]20 A
Current - Collector Pulsed (Icm)40 A
Gate Charge57 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power - Max [Max]115 W
Reverse Recovery Time (trr)107 ns
Supplier Device PackageTO-220
Switching Energy140 µJ, 83 µJ
Test Condition10 A, 10 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic1.95 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 530$ 2.18
Tube 1$ 2.31
50$ 1.13
100$ 1.01
500$ 0.81
1000$ 0.74
2000$ 0.69
5000$ 0.64
NewarkEach 1$ 2.53
10$ 1.48
100$ 1.36
500$ 1.16
1000$ 1.09
3000$ 1.05
5000$ 1.01

Description

General part information

STGP10 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.