Discrete Semiconductor Products

MSC015SMA070B

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Microchip Technology

TRANS MOSFET N-CH SIC 700V 149A 3-PIN(3+TAB) TO-247 TUBE AUTOMOTIVE AEC-Q101

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Search across all available documentation for this part.

DocumentsProduct Change Notice EN

Discrete Semiconductor Products

MSC015SMA070B

Active

Microchip Technology

TRANS MOSFET N-CH SIC 700V 149A 3-PIN(3+TAB) TO-247 TUBE AUTOMOTIVE AEC-Q101

Deep-Dive with AI

DocumentsProduct Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MSC015SMA070B

Current - Continuous Drain (Id) @ 25°C	131 A
Drain to Source Voltage (Vdss)	700 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	215 nC
Input Capacitance (Ciss) (Max) @ Vds	4500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	400 W
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	TO-247-3
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	2.4 V

MSC015SMA070 Series

1200V mSiC™ Schottky Barrier Diodes (SBDs)

Part	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs (Max) [Min]	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Speed	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Vgs(th) (Max) @ Id [Max]
Microchip Technology MSC015SMA070B	2.4 V	Through Hole	131 A	19 mOhm	400 W	700 V	-10 V	25 V	4500 pF	TO-247-3	TO-247-3	215 nC	N-Channel	-55 °C	175 ░C
Microchip Technology MSC015SMA070S	2.4 V	Surface Mount	126 A	19 mOhm	370 W	700 V	-10 V	23 V	4500 pF	D3PAK	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	215 nC	N-Channel	-55 °C	175 ░C
Microchip Technology MSC015SDA120B		Through Hole								TO-247	TO-247-2					SiC (Silicon Carbide) Schottky	No Recovery Time	15 A	1.5 V 15 A	1.2 kV	0 ns
Microchip Technology MSC015SMA070B4		Through Hole	140 A	19 mOhm	455 W	700 V	-10 V	23 V	4500 pF	TO-247-4	TO-247-4	215 nC	N-Channel	-55 °C	175 ░C							2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 35.76
		25	$ 32.98
		100	$ 26.95
Newark	Each	10	$ 23.08
		100	$ 20.09
		500	$ 18.74

Description

General part information

MSC015SMA070 Series

MSC015SDA120 is part of our newest family of mSiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet