MSC015SMA070 Series

1200V mSiC™ Schottky Barrier Diodes (SBDs)

Catalog

1200V mSiC™ Schottky Barrier Diodes (SBDs)

Part	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs (Max) [Min]	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Speed	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Vgs(th) (Max) @ Id [Max]
Microchip Technology MSC015SMA070B	2.4 V	Through Hole	131 A	19 mOhm	400 W	700 V	-10 V	25 V	4500 pF	TO-247-3	TO-247-3	215 nC	N-Channel	-55 °C	175 ░C
Microchip Technology MSC015SMA070S	2.4 V	Surface Mount	126 A	19 mOhm	370 W	700 V	-10 V	23 V	4500 pF	D3PAK	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	215 nC	N-Channel	-55 °C	175 ░C
Microchip Technology MSC015SDA120B		Through Hole								TO-247	TO-247-2					SiC (Silicon Carbide) Schottky	No Recovery Time	15 A	1.5 V 15 A	1.2 kV	0 ns
Microchip Technology MSC015SMA070B4		Through Hole	140 A	19 mOhm	455 W	700 V	-10 V	23 V	4500 pF	TO-247-4	TO-247-4	215 nC	N-Channel	-55 °C	175 ░C							2.4 V

Catalog

1200V mSiC™ Schottky Barrier Diodes (SBDs)

Key Features

- Low capacitances and low gate charge

- Fast switching speed due to low internal gate resistance (ESR)

- Stable operation at high junction temperature, TJ(max) = 175°C

- Fast and reliable body diode

- Superior avalanche ruggedness

- RoHS compliant

Description

MSC015SDA120 is part of our newest family of mSiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.