MSC015SMA070B4
ActivePOWER FIELD-EFFECT TRANSISTOR, 140A I(D), 700V, 0.019OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET, TO-247
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MSC015SMA070B4
ActivePOWER FIELD-EFFECT TRANSISTOR, 140A I(D), 700V, 0.019OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET, TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | MSC015SMA070B4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 140 A |
| Drain to Source Voltage (Vdss) | 700 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 215 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) [Max] | 455 W |
| Rds On (Max) @ Id, Vgs | 19 mOhm |
| Supplier Device Package | TO-247-4 |
| Vgs (Max) [Max] | 23 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id [Max] | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 36.84 | |
| 25 | $ 33.97 | |||
| 100 | $ 29.56 | |||
| Microchip Direct | TUBE | 1 | $ 36.84 | |
| 10 | $ 33.97 | |||
| 100 | $ 29.56 | |||
| 500 | $ 27.57 | |||
| Newark | Each | 1 | $ 38.31 | |
| 5 | $ 37.56 | |||
| 10 | $ 36.83 | |||
| 25 | $ 36.08 | |||
| 50 | $ 35.33 | |||
| 100 | $ 33.04 | |||
| 250 | $ 30.74 | |||
Description
General part information
MSC015SMA070 Series
MSC015SDA120 is part of our newest family of mSiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.
Documents
Technical documentation and resources
