
Discrete Semiconductor Products
RFUH20TB3SNZC9
ActiveRohm Semiconductor
DIODE GEN PURP 350V 20A TO220NFM
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Discrete Semiconductor Products
RFUH20TB3SNZC9
ActiveRohm Semiconductor
DIODE GEN PURP 350V 20A TO220NFM
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RFUH20TB3SNZC9 |
|---|---|
| Current - Reverse Leakage @ Vr | 10 nA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 150 ¯C |
| Package / Case | TO-220-2 Full Pack |
| Reverse Recovery Time (trr) | 25 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-220NFM |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 350 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RFUH20 Series
ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
Documents
Technical documentation and resources