Zenode.ai Logo
Beta
DCG010-TL-E
Discrete Semiconductor Products

BC848CWT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 30 V, 100 MA, 150 MW, SC-70, SURFACE MOUNT

Deep-Dive with AI

Search across all available documentation for this part.

DCG010-TL-E
Discrete Semiconductor Products

BC848CWT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 30 V, 100 MA, 150 MW, SC-70, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationBC848CWT1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]420
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-70, SOT-323
Power - Max [Max]150 mW
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 11539$ 0.03
NewarkEach (Supplied on Full Reel) 6000$ 0.03
18000$ 0.03
30000$ 0.02
ON SemiconductorN/A 1$ 0.02

Description

General part information

BC848CDW1 Series

This 100 mA, 30 V, NPN Bipolar Junction Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.