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ONSEMI BAS40LT1G
Discrete Semiconductor Products

BC848BLT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 30 V, 100 MHZ, 300 MW, 100 MA, 200 ROHS COMPLIANT: YES

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ONSEMI BAS40LT1G
Discrete Semiconductor Products

BC848BLT1G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 30 V, 100 MHZ, 300 MW, 100 MA, 200 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationBC848BLT1G
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Supplier Device PackageSOT-23-3 (TO-236)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.13
10$ 0.08
100$ 0.05
500$ 0.04
1000$ 0.03
Digi-Reel® 1$ 0.13
10$ 0.08
100$ 0.05
500$ 0.04
1000$ 0.03
Tape & Reel (TR) 3000$ 0.03
6000$ 0.02
9000$ 0.02
15000$ 0.02
21000$ 0.02
30000$ 0.02
75000$ 0.02
150000$ 0.01
300000$ 0.01
NewarkEach (Supplied on Cut Tape) 1$ 0.14
10$ 0.08
25$ 0.06
50$ 0.05
ON SemiconductorN/A 1$ 0.01

Description

General part information

BC848CDW1 Series

This 100 mA, 30 V, NPN Bipolar Junction Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.