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SOT-23-3
Discrete Semiconductor Products

BC848CMTF

Obsolete
ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR

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SOT-23-3
Discrete Semiconductor Products

BC848CMTF

Obsolete
ON Semiconductor

NPN EPITAXIAL SILICON TRANSISTOR

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Technical Specifications

Parameters and characteristics for this part

SpecificationBC848CMTF
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]420
Frequency - Transition300 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]310 mW
Supplier Device PackageSOT-23-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

BC848CDW1 Series

This 100 mA, 30 V, NPN Bipolar Junction Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.