BC848CDW1 Series

100 mA, 30 V, NPN Bipolar Junction Transistor

Catalog

100 mA, 30 V, NPN Bipolar Junction Transistor

Part	Transistor Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Supplier Device Package	Package / Case	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Operating Temperature	Power - Max [Max]
ON Semiconductor BC848BLT1
ON Semiconductor BC848CWT1
ON Semiconductor SBC848BLT1G	NPN	Surface Mount	30 V	15 nA	600 mV	-55 °C	150 °C	Automotive	SOT-23-3 (TO-236)	SC-59 SOT-23-3 TO-236-3	100 MHz	100 mA	200	AEC-Q101
ON Semiconductor BC848CLT1G	NPN	Surface Mount	30 V	15 nA	600 mV	-55 °C	150 °C		SOT-23-3 (TO-236)	SC-59 SOT-23-3 TO-236-3	100 MHz	100 mA	420
ON Semiconductor BC848CMTF	NPN	Surface Mount	30 V	15 nA	600 mV				SOT-23-3	SC-59 SOT-23-3 TO-236-3	300 MHz	100 mA	420		150 °C	310 mW
ON Semiconductor BC848CDW1T1G	2 NPN (Dual)	Surface Mount	30 V	15 nA	600 mV	-55 °C	150 °C		SC-88 SC70-6 SOT-363	6-TSSOP SC-88 SOT-363	100 MHz	100 mA	420			380 mW
ON Semiconductor BC848BLT3G	NPN	Surface Mount	30 V	15 nA	600 mV	-55 °C	150 °C		SOT-23-3 (TO-236)	SC-59 SOT-23-3 TO-236-3	100 MHz	100 mA	200
ON Semiconductor BC848CWT1G	NPN	Surface Mount	30 V	15 nA	600 mV	-55 °C	150 °C			SC-70 SOT-323	100 MHz	100 mA	420			150 mW
ON Semiconductor BC848CPDW1T1	1 NPN 1 PNP	Surface Mount	30 V	15 nA	600 mV 650 mV	-55 °C	150 °C		SC-88 SC70-6 SOT-363	6-TSSOP SC-88 SOT-363	100 MHz	100 mA	420			380 mW
ON Semiconductor BC848BLT1G	NPN	Surface Mount	30 V	15 nA	600 mV	-55 °C	150 °C		SOT-23-3 (TO-236)	SC-59 SOT-23-3 TO-236-3	100 MHz	100 mA	200

Catalog

100 mA, 30 V, NPN Bipolar Junction Transistor

Key Features

• Moisture Sensitivity Level: 1

• ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V

• Pb-Free Packages are Available

• NSV and S Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

Description

This 100 mA, 30 V, NPN Bipolar Junction Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.