Specification	RGW00TS65HRC11

Current - Collector (Ic) (Max) [Max]	96 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	141 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	254 W
Supplier Device Package	TO-247N
Td (on/off) @ 25°C	48 ns, 186 ns
Test Condition	25 A, 400 V, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

RGW00 Series

High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Part	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Power - Max [Max]	Current - Collector Pulsed (Icm)	IGBT Type	Td (on/off) @ 25°C	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	Test Condition	Gate Charge	Reverse Recovery Time (trr)	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Switching Energy	Td (on/off) @ 25°C
Rohm Semiconductor RGW00TS65GC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop	52 ns 180 ns	TO-247N	96 A	TO-247-3	10 Ohm 15 V 50 A 400 V	141 nC
Rohm Semiconductor RGW00TS65DGC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop	52 ns 180 ns	TO-247N	96 A	TO-247-3	10 Ohm 15 V 50 A 400 V	141 nC	95 ns
Rohm Semiconductor RGW00TS65CHRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A			TO-247N	96 A	TO-247-3	10 Ohm 15 V 25 A 400 V	141 nC	33 ns	180 ns	49 ns	180 µJ 420 µJ
Rohm Semiconductor RGW00TS65EHRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop		TO-247N	96 A	TO-247-3	10 Ohm 15 V 25 A 400 V	141 nC	90 ns	183 ns	50 ns
Rohm Semiconductor RGW00TS65HRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop		TO-247N	96 A	TO-247-3	10 Ohm 15 V 25 A 400 V	141 nC					48 ns 186 ns
Rohm Semiconductor RGW00TS65DHRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop		TO-247N	96 A	TO-247-3	10 Ohm 15 V 25 A 400 V	141 nC	90 ns				48 ns 186 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.39
	Tube	1	$ 4.15
		10	$ 2.73
		450	$ 1.60
Newark	Each	1	$ 3.90

Description

General part information

RGW00 Series

The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS.

Documents

Technical documentation and resources

Technical Data Sheet EN

RGW00TS65HRC11

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RGW00TS65HRC11

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Technical Specifications

RGW00 Series

Pricing

Description

RGW00 Series

Documents

Technical Data Sheet EN

Estimation of switching losses in IGBTs operating with resistive load

What Is Thermal Design

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

About Export Administration Regulations (EAR)

Impedance Characteristics of Bypass Capacitor

How to Use LTspice&reg; Models: Tips for Improving Convergence

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Two-Resistor Model for Thermal Simulation

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

Importance of Probe Calibration When Measuring Power: Deskew

Notes for Calculating Power Consumption:Static Operation

How to Create Symbols for PSpice Models

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Precautions for Thermal Resistance of Insulation Sheet

Basics of Thermal Resistance and Heat Dissipation

How to Use LTspice&reg; Models

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Package Dimensions

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Method for Monitoring Switching Waveform

About Flammability of Materials

Types and Features of Transistors

Measurement Method and Usage of Thermal Resistance RthJC

What is a Thermal Model? (IGBT)

PCB Layout Thermal Design Guide

Precautions When Measuring the Rear of the Package with a Thermocouple

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

RGW00TS65HR Data Sheet

Calculation of Power Dissipation in Switching Circuit

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Compliance of the ELV directive

Part Explanation

4 Steps for Successful Thermal Designing of Power Devices

Moisture Sensitivity Level

Notes for Temperature Measurement Using Thermocouples

Judgment Criteria of Thermal Evaluation

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Anti-Whisker formation

RGW00 Series

How to Use LTspice® Models: Tips for Improving Convergence

How to Use LTspice® Models