Discrete Semiconductor Products

RGW00TS65DHRC11

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HIGH-SPEED FAST SWITCHING TYPE, 650V 50A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT FOR AUTOMOTIVE

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Search across all available documentation for this part.

DocumentsPrecautions When Measuring the Rear of the Package with a Thermocouple About Export Administration Regulations (EAR)+40

Discrete Semiconductor Products

RGW00TS65DHRC11

Active

Rohm Semiconductor

HIGH-SPEED FAST SWITCHING TYPE, 650V 50A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT FOR AUTOMOTIVE

Deep-Dive with AI

DocumentsPrecautions When Measuring the Rear of the Package with a Thermocouple About Export Administration Regulations (EAR)+40

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGW00TS65DHRC11

Current - Collector (Ic) (Max) [Max]	96 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	141 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	254 W
Reverse Recovery Time (trr)	90 ns
Supplier Device Package	TO-247N
Td (on/off) @ 25°C	48 ns, 186 ns
Test Condition	25 A, 400 V, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

RGW00 Series

High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Part	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Power - Max [Max]	Current - Collector Pulsed (Icm)	IGBT Type	Td (on/off) @ 25°C	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	Test Condition	Gate Charge	Reverse Recovery Time (trr)	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Switching Energy	Td (on/off) @ 25°C
Rohm Semiconductor RGW00TS65GC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop	52 ns 180 ns	TO-247N	96 A	TO-247-3	10 Ohm 15 V 50 A 400 V	141 nC
Rohm Semiconductor RGW00TS65DGC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop	52 ns 180 ns	TO-247N	96 A	TO-247-3	10 Ohm 15 V 50 A 400 V	141 nC	95 ns
Rohm Semiconductor RGW00TS65CHRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A			TO-247N	96 A	TO-247-3	10 Ohm 15 V 25 A 400 V	141 nC	33 ns	180 ns	49 ns	180 µJ 420 µJ
Rohm Semiconductor RGW00TS65EHRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop		TO-247N	96 A	TO-247-3	10 Ohm 15 V 25 A 400 V	141 nC	90 ns	183 ns	50 ns
Rohm Semiconductor RGW00TS65HRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop		TO-247N	96 A	TO-247-3	10 Ohm 15 V 25 A 400 V	141 nC					48 ns 186 ns
Rohm Semiconductor RGW00TS65DHRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop		TO-247N	96 A	TO-247-3	10 Ohm 15 V 25 A 400 V	141 nC	90 ns				48 ns 186 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	275	$ 9.15
	Tube	1	$ 6.47
		10	$ 4.43
		450	$ 4.09
Newark	Each	1	$ 9.31
		10	$ 6.40
		25	$ 6.40
		50	$ 6.40
		100	$ 6.39
		250	$ 6.39
		900	$ 4.25

Description

General part information

RGW00 Series

The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS.

Documents

Technical documentation and resources

RGW00TS65DHRC11

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RGW00TS65DHRC11

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Technical Specifications

RGW00 Series

Pricing

Description

RGW00 Series

Documents

Precautions When Measuring the Rear of the Package with a Thermocouple

About Export Administration Regulations (EAR)

Notes for Temperature Measurement Using Thermocouples

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Simulation Guide for PTC Heater Thermal Simulation (ROHM Solution Simulator)

Anti-Whisker formation

Package Dimensions

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

How to Use the Thermal Resistance and Thermal Characteristics Parameters

How to Create Symbols for PSpice Models

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

What is a Thermal Model? (IGBT)

What Is Thermal Design

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Compliance of the ELV directive

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Estimation of switching losses in IGBTs operating with resistive load

Types and Features of Transistors

How to Use LTspice&reg; Models: Tips for Improving Convergence

Impedance Characteristics of Bypass Capacitor

Calculation of Power Dissipation in Switching Circuit

Part Explanation

RGW00TS65DHR Data Sheet

Importance of Probe Calibration When Measuring Power: Deskew

Basics of Thermal Resistance and Heat Dissipation

Notes for Calculating Power Consumption:Static Operation

How to Use LTspice&reg; Models

Precautions for Thermal Resistance of Insulation Sheet

4 Steps for Successful Thermal Designing of Power Devices

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

PCB Layout Thermal Design Guide

Method for Monitoring Switching Waveform

Moisture Sensitivity Level

Two-Resistor Model for Thermal Simulation

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

About Flammability of Materials

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Measurement Method and Usage of Thermal Resistance RthJC

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Judgment Criteria of Thermal Evaluation

Technical Data Sheet EN

RGW00 Series

How to Use LTspice® Models: Tips for Improving Convergence

How to Use LTspice® Models