Discrete Semiconductor Products

RGW00TS65CHRC11

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HIGH-SPEED FAST SWITCHING TYPE, 650V 50A, AUTOMOTIVE HYBRID IGBT WITH BUILT-IN SIC-SBD

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DocumentsHow to Use the Thermal Resistance and Thermal Characteristics Parameters Impedance Characteristics of Bypass Capacitor +26

Discrete Semiconductor Products

RGW00TS65CHRC11

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Rohm Semiconductor

HIGH-SPEED FAST SWITCHING TYPE, 650V 50A, AUTOMOTIVE HYBRID IGBT WITH BUILT-IN SIC-SBD

Deep-Dive with AI

DocumentsHow to Use the Thermal Resistance and Thermal Characteristics Parameters Impedance Characteristics of Bypass Capacitor +26

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGW00TS65CHRC11

Current - Collector (Ic) (Max) [Max]	96 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	141 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	254 W
Reverse Recovery Time (trr)	33 ns
Supplier Device Package	TO-247N
Switching Energy	180 µJ, 420 µJ
Td (on/off) @ 25°C	49 ns, 180 ns
Test Condition	400 V, 25 A, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max)	650 V

RGW00TS65DHR Series

High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Part	Supplier Device Package	Test Condition [custom]	Test Condition [custom]	Test Condition [custom]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Gate Charge	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Reverse Recovery Time (trr)	Mounting Type	IGBT Type	Test Condition	Switching Energy
Rohm Semiconductor RGW00TS65DGC11	TO-247N	15 V 400 V	10 Ohm	50 A	650 V	96 A	TO-247-3	-40 C	175 °C	200 A	52 ns 180 ns	141 nC	1.9 V	254 W	95 ns	Through Hole	Trench Field Stop
Rohm Semiconductor RGW00TS65CHRC11	TO-247N				650 V	96 A	TO-247-3	-40 C	175 °C	200 A	49 ns 180 ns	141 nC	1.9 V	254 W	33 ns	Through Hole		10 Ohm 15 V 25 A 400 V	180 µJ 420 µJ
Rohm Semiconductor RGW00TS65EHRC11	TO-247N				650 V	96 A	TO-247-3	-40 C	175 °C	200 A	50 ns 183 ns	141 nC	1.9 V	254 W	90 ns	Through Hole	Trench Field Stop	10 Ohm 15 V 25 A 400 V
Rohm Semiconductor RGW00TS65HRC11	TO-247N				650 V	96 A	TO-247-3	-40 C	175 °C	200 A	48 ns 186 ns	141 nC	1.9 V	254 W		Through Hole	Trench Field Stop	10 Ohm 15 V 25 A 400 V
Rohm Semiconductor RGW00TS65DHRC11	TO-247N				650 V	96 A	TO-247-3	-40 C	175 °C	200 A	48 ns 186 ns	141 nC	1.9 V	254 W	90 ns	Through Hole	Trench Field Stop	10 Ohm 15 V 25 A 400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 9.23
		30	$ 7.74

Description

General part information

RGW00TS65DHR Series

The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS.