Discrete Semiconductor Products

RGW00TS65DGC11

NRND

Rohm Semiconductor

IGBT TRNCH FIELD 650V 96A TO247N

Deep-Dive with AI

Search across all available documentation for this part.

Discrete Semiconductor Products

RGW00TS65DGC11

NRND

Rohm Semiconductor

IGBT TRNCH FIELD 650V 96A TO247N

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGW00TS65DGC11

Current - Collector (Ic) (Max) [Max]	96 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	141 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	254 W
Reverse Recovery Time (trr)	95 ns
Supplier Device Package	TO-247N
Td (on/off) @ 25°C	180 ns, 52 ns
Test Condition	10 Ohm, 50 A, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

RGW00 Series

High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Part	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Power - Max [Max]	Current - Collector Pulsed (Icm)	IGBT Type	Td (on/off) @ 25°C	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	Test Condition	Gate Charge	Reverse Recovery Time (trr)	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Switching Energy	Td (on/off) @ 25°C
Rohm Semiconductor RGW00TS65GC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop	52 ns 180 ns	TO-247N	96 A	TO-247-3	10 Ohm 15 V 50 A 400 V	141 nC
Rohm Semiconductor RGW00TS65DGC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop	52 ns 180 ns	TO-247N	96 A	TO-247-3	10 Ohm 15 V 50 A 400 V	141 nC	95 ns
Rohm Semiconductor RGW00TS65CHRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A			TO-247N	96 A	TO-247-3	10 Ohm 15 V 25 A 400 V	141 nC	33 ns	180 ns	49 ns	180 µJ 420 µJ
Rohm Semiconductor RGW00TS65EHRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop		TO-247N	96 A	TO-247-3	10 Ohm 15 V 25 A 400 V	141 nC	90 ns	183 ns	50 ns
Rohm Semiconductor RGW00TS65HRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop		TO-247N	96 A	TO-247-3	10 Ohm 15 V 25 A 400 V	141 nC					48 ns 186 ns
Rohm Semiconductor RGW00TS65DHRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop		TO-247N	96 A	TO-247-3	10 Ohm 15 V 25 A 400 V	141 nC	90 ns				48 ns 186 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 7.67
	Tube	450	$ 3.26

Description

General part information

RGW00 Series

The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS.

Documents

Technical documentation and resources

No documents available