STP10NM60N
ActiveN-CHANNEL 600 V, 0.53 OHM TYP., 10 A, MDMESH II POWER MOSFET IN TO-220 PACKAGE
STP10NM60N
ActiveN-CHANNEL 600 V, 0.53 OHM TYP., 10 A, MDMESH II POWER MOSFET IN TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP10NM60N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 70 W |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1794 | $ 3.26 | |
| Tube | 1 | $ 2.72 | ||
| 50 | $ 2.16 | |||
| 100 | $ 1.85 | |||
| 500 | $ 1.64 | |||
| 1000 | $ 1.41 | |||
| 2000 | $ 1.33 | |||
| 5000 | $ 1.27 | |||
Description
General part information
STP10 Series
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources
