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TO-220-3 Type A
Discrete Semiconductor Products

STP10LN80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 0.55 OHM TYP., 8 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

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Search across all available documentation for this part.

DocumentsAN2344+14
TO-220-3 Type A
Discrete Semiconductor Products

STP10LN80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 0.55 OHM TYP., 8 A MDMESH K5 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsAN2344+14

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP10LN80K5
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]427 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)110 W
Rds On (Max) @ Id, Vgs630 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

STP10 Series

N-channel 800 V, 0.78 Ohm typ., 9 A SuperMESH Power MOSFETs in a TO-220FP package

PartMounting TypeSupplier Device PackageVgs (Max)Drain to Source Voltage (Vdss)Gate Charge (Qg) (Max) @ VgsCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Package / CaseInput Capacitance (Ciss) (Max) @ VdsOperating Temperature [Max]Operating Temperature [Min]Power Dissipation (Max) [Max]FET TypeTechnologyPower Dissipation (Max)Input Capacitance (Ciss) (Max) @ Vds [Max]Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ Vgs [Max]Operating Temperature
TO-220-3
STMicroelectronics
STP10NM60N
Through Hole
TO-220
25 V
600 V
19 nC
10 A
4 V
10 V
TO-220-3
540 pF
150 °C
-55 °C
70 W
N-Channel
MOSFET (Metal Oxide)
STMICROELECTRONICS STP7NK80ZFP
STMicroelectronics
STP10NK80ZFP
Through Hole
TO-220FP
30 V
800 V
72 nC
9 A
4.5 V
10 V
TO-220-3 Full Pack
150 °C
-55 °C
N-Channel
MOSFET (Metal Oxide)
40 W
2180 pF
900 mOhm
TO-220-3
STMicroelectronics
STP10N65K3
Through Hole
TO-220
30 V
650 V
10 A
4.5 V
10 V
TO-220-3
150 °C
-55 °C
N-Channel
MOSFET (Metal Oxide)
150 W
1 Ohm
42 nC
TO-220-3
STMicroelectronics
STP10NM65N
Through Hole
TO-220
25 V
650 V
25 nC
9 A
4 V
10 V
TO-220-3
850 pF
150 °C
-55 °C
N-Channel
MOSFET (Metal Oxide)
90 W
480 mOhm
TO-220-3
STMicroelectronics
STP10NM50N
Through Hole
TO-220
25 V
500 V
17 nC
7 A
4 V
10 V
TO-220-3
150 °C
-55 °C
70 W
N-Channel
MOSFET (Metal Oxide)
450 pF
630 mOhm
TO-220-3
STMicroelectronics
STP10N95K5
Through Hole
TO-220
30 V
950 V
8 A
5 V
10 V
TO-220-3
150 °C
-55 °C
N-Channel
MOSFET (Metal Oxide)
130 W
630 pF
800 mOhm
22 nC
TO-220-3
STMicroelectronics
STP10N60M2
Through Hole
TO-220
25 V
600 V
7.5 A
4 V
10 V
TO-220-3
150 °C
-55 °C
N-Channel
MOSFET (Metal Oxide)
85 W
400 pF
600 mOhm
13.5 nC
TO-220-3 Type A
STMicroelectronics
STP10LN80K5
Through Hole
TO-220
30 V
800 V
15 nC
8 A
5 V
10 V
TO-220-3
150 °C
-55 °C
N-Channel
MOSFET (Metal Oxide)
110 W
427 pF
630 mOhm
STMicroelectronics-ACST830-8T TRIACs TRIAC 800V 84A 3-Pin(3+Tab) TO-220AB Tube
STMicroelectronics
STP10P6F6
Through Hole
TO-220
20 V
60 V
10 A
4 V
10 V
TO-220-3
P-Channel
MOSFET (Metal Oxide)
340 pF
160 mOhm
6.4 nC
175 °C
TO-220-3
STMicroelectronics
STP10NK50Z
Through Hole
TO-220
30 V
500 V
39.2 nC
9 A
4.5 V
10 V
TO-220-3
150 °C
-55 °C
N-Channel
MOSFET (Metal Oxide)
125 W
1219 pF
700 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 3.70
Tube 50$ 2.47
100$ 2.12
250$ 2.00
500$ 1.88
1250$ 1.61
2500$ 1.52
5000$ 1.46

Description

General part information

STP10 Series

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.