Discrete Semiconductor Products

STP10N65K3

Obsolete

STMicroelectronics

MOSFET N-CH 650V 10A TO220

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Discrete Semiconductor Products

STP10N65K3

Obsolete

STMicroelectronics

MOSFET N-CH 650V 10A TO220

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP10N65K3

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STP10 Series

N-channel 800 V, 0.78 Ohm typ., 9 A SuperMESH Power MOSFETs in a TO-220FP package

Part	Mounting Type	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]	FET Type	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature
STMicroelectronics STP10NM60N	Through Hole	TO-220	25 V	600 V	19 nC	10 A	4 V	10 V	TO-220-3	540 pF	150 °C	-55 °C	70 W	N-Channel	MOSFET (Metal Oxide)
STMicroelectronics STP10NK80ZFP	Through Hole	TO-220FP	30 V	800 V	72 nC	9 A	4.5 V	10 V	TO-220-3 Full Pack		150 °C	-55 °C		N-Channel	MOSFET (Metal Oxide)	40 W	2180 pF	900 mOhm
STMicroelectronics STP10N65K3	Through Hole	TO-220	30 V	650 V		10 A	4.5 V	10 V	TO-220-3		150 °C	-55 °C		N-Channel	MOSFET (Metal Oxide)	150 W		1 Ohm	42 nC
STMicroelectronics STP10NM65N	Through Hole	TO-220	25 V	650 V	25 nC	9 A	4 V	10 V	TO-220-3	850 pF	150 °C	-55 °C		N-Channel	MOSFET (Metal Oxide)	90 W		480 mOhm
STMicroelectronics STP10NM50N	Through Hole	TO-220	25 V	500 V	17 nC	7 A	4 V	10 V	TO-220-3		150 °C	-55 °C	70 W	N-Channel	MOSFET (Metal Oxide)		450 pF	630 mOhm
STMicroelectronics STP10N95K5	Through Hole	TO-220	30 V	950 V		8 A	5 V	10 V	TO-220-3		150 °C	-55 °C		N-Channel	MOSFET (Metal Oxide)	130 W	630 pF	800 mOhm	22 nC
STMicroelectronics STP10N60M2	Through Hole	TO-220	25 V	600 V		7.5 A	4 V	10 V	TO-220-3		150 °C	-55 °C		N-Channel	MOSFET (Metal Oxide)	85 W	400 pF	600 mOhm	13.5 nC
STMicroelectronics STP10LN80K5	Through Hole	TO-220	30 V	800 V	15 nC	8 A	5 V	10 V	TO-220-3		150 °C	-55 °C		N-Channel	MOSFET (Metal Oxide)	110 W	427 pF	630 mOhm
STMicroelectronics STP10P6F6	Through Hole	TO-220	20 V	60 V		10 A	4 V	10 V	TO-220-3					P-Channel	MOSFET (Metal Oxide)		340 pF	160 mOhm	6.4 nC	175 °C
STMicroelectronics STP10NK50Z	Through Hole	TO-220	30 V	500 V	39.2 nC	9 A	4.5 V	10 V	TO-220-3		150 °C	-55 °C		N-Channel	MOSFET (Metal Oxide)	125 W	1219 pF	700 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.03

Description

General part information

STP10 Series

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Documents

Technical documentation and resources