Discrete Semiconductor Products
STP55NF06
ActiveSTMicroelectronics
N-CHANNEL 60 V, 0.015 OHM, 50 A STRIPFET(TM) II POWER MOSFET IN TO-220 PACKAGE
Discrete Semiconductor Products
STP55NF06
ActiveSTMicroelectronics
N-CHANNEL 60 V, 0.015 OHM, 50 A STRIPFET(TM) II POWER MOSFET IN TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP55NF06 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1300 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 110 W |
| Rds On (Max) @ Id, Vgs | 18 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 29734 | $ 1.47 | |
| Tube | 1 | $ 1.57 | ||
| 50 | $ 0.81 | |||
| 100 | $ 0.77 | |||
| 500 | $ 0.64 | |||
| 1000 | $ 0.58 | |||
Description
General part information
STP55 Series
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Documents
Technical documentation and resources
