STP55NF06L
ActiveMOSFET TRANSISTOR, N CHANNEL, 55 A, 60 V, 0.014 OHM, 10 V, 1.7 V ROHS COMPLIANT: YES
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STP55NF06L
ActiveMOSFET TRANSISTOR, N CHANNEL, 55 A, 60 V, 0.014 OHM, 10 V, 1.7 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | STP55NF06L |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 55 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 95 W |
| Rds On (Max) @ Id, Vgs | 18 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP55 Series
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Documents
Technical documentation and resources
