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TO-236AB
Discrete Semiconductor Products

PBSS5350THR

Active
Nexperia USA Inc.

50 V, 3 A PNP LOW VCESAT (BISS) TRANSISTOR

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TO-236AB
Discrete Semiconductor Products

PBSS5350THR

Active
Nexperia USA Inc.

50 V, 3 A PNP LOW VCESAT (BISS) TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS5350THR
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
Frequency - Transition100 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]1.44 W
QualificationAEC-Q101
Supplier Device PackageTO-236AB
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic390 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.40
10$ 0.31
100$ 0.19
500$ 0.17
1000$ 0.12
Digi-Reel® 1$ 0.40
10$ 0.31
100$ 0.19
500$ 0.17
1000$ 0.12
N/A 4857$ 0.69
Tape & Reel (TR) 3000$ 0.09

Description

General part information

PBSS5350 Series

PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.