
Discrete Semiconductor Products
PBSS5350D,125
ActiveNexperia USA Inc.
TRANS GP BJT PNP 50V 3A 1200MW 6-PIN TSOP T/R
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Discrete Semiconductor Products
PBSS5350D,125
ActiveNexperia USA Inc.
TRANS GP BJT PNP 50V 3A 1200MW 6-PIN TSOP T/R
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS5350D,125 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-457, SC-74 |
| Power - Max [Max] | 750 mW |
| Supplier Device Package | 6-TSOP |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBSS5350 Series
PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources