
Discrete Semiconductor Products
PBSS5350TVL
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 50 V, 3 A PNP LOW VCESAT TRANSISTOR
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DocumentsPBSS5350TVL Datasheet (PDF)

Discrete Semiconductor Products
PBSS5350TVL
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 50 V, 3 A PNP LOW VCESAT TRANSISTOR
Deep-Dive with AI
DocumentsPBSS5350TVL Datasheet (PDF)
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS5350TVL |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 200 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Supplier Device Package | TO-236AB |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 390 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBSS5350 Series
PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources