Discrete Semiconductor Products

FDMC8651

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ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 20 A, 30 V, 0.0043 OHM, 4.5 V, 1.1 V

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Search across all available documentation for this part.

DocumentsDatasheet Technical Data Sheet EN +1

Discrete Semiconductor Products

FDMC8651

Active

ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 20 A, 30 V, 0.0043 OHM, 4.5 V, 1.1 V

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDMC8651

Current - Continuous Drain (Id) @ 25°C	15 A, 20 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27.2 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.3 W, 41 W
Rds On (Max) @ Id, Vgs	6.1 mOhm
Supplier Device Package	Power33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

FDMC86324 Series

N-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 100 V, 53 A, 8.5 mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]
ON Semiconductor FDMC86248	6 V 10 V	Power33	8-PowerTDFN	MOSFET (Metal Oxide)	3.4 A	20 V	150 V	525 pF	Surface Mount	2.3 W 36 W	90 mOhm	N-Channel	4 V	-55 °C	150 °C	9 nC
ON Semiconductor FDMC86324	6 V 10 V	Power33	8-PowerTDFN	MOSFET (Metal Oxide)	7 A 20 A	20 V	80 V	965 pF	Surface Mount	2.3 W 41 W	23 mOhm	N-Channel	4 V	-55 °C	150 °C	18 nC
ON Semiconductor FDMC86012	2.5 V 4.5 V	Power33	8-PowerWDFN	MOSFET (Metal Oxide)	23 A	12 V	30 V	5075 pF	Surface Mount	2.3 W 54 W	2.7 mOhm	N-Channel	1.5 V	-55 °C	150 °C	38 nC
ON Semiconductor FDMC8651	2.5 V 4.5 V	Power33	8-PowerTDFN	MOSFET (Metal Oxide)	15 A 20 A	12 V	30 V		Surface Mount	2.3 W 41 W	6.1 mOhm	N-Channel	1.5 V	-55 °C	150 °C	27.2 nC
ON Semiconductor FDMC86184	6 V 10 V	8-PQFN (3.3x3.3)	8-PowerWDFN	MOSFET (Metal Oxide)	57 A	20 V	100 V	2090 pF	Surface Mount			N-Channel	4 V	-55 °C	150 °C		20 nC	8.5 mOhm	54 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.03
		10	$ 1.30
		100	$ 0.88
		500	$ 0.70
		1000	$ 0.64
	Digi-Reel®	1	$ 2.03
		10	$ 1.30
		100	$ 0.88
		500	$ 0.70
		1000	$ 0.64
	Tape & Reel (TR)	3000	$ 0.57
		6000	$ 0.55
Newark	Each (Supplied on Full Reel)	3000	$ 0.73
		6000	$ 0.67
		12000	$ 0.60
		18000	$ 0.58
		30000	$ 0.56
ON Semiconductor	N/A	1	$ 0.51

Description

General part information

FDMC86324 Series

This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on)has been maintained to provide a sub logic-level device.

Documents

Technical documentation and resources

Datasheet

Technical Data Sheet EN

Datasheet

Package Drawing-483AK-PQFN8 3.3x3.3, 0.65P

Package Drawing