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ONSEMI FDMC86184
Discrete Semiconductor Products

FDMC86184

Active
ON Semiconductor

N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 100 V, 53 A, 8.5 MΩ

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ONSEMI FDMC86184
Discrete Semiconductor Products

FDMC86184

Active
ON Semiconductor

N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 100 V, 53 A, 8.5 MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC86184
Current - Continuous Drain (Id) @ 25°C57 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC
Input Capacitance (Ciss) (Max) @ Vds2090 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max) [Max]54 W
Rds On (Max) @ Id, Vgs [Max]8.5 mOhm
Supplier Device Package8-PQFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.79
10$ 1.81
100$ 1.25
500$ 1.01
1000$ 0.93
Digi-Reel® 1$ 2.79
10$ 1.81
100$ 1.25
500$ 1.01
1000$ 0.93
Tape & Reel (TR) 3000$ 0.86
ON SemiconductorN/A 1$ 0.92

Description

General part information

FDMC86324 Series

This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on)has been maintained to provide a sub logic-level device.