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onsemi-FDMC86012 MOSFETs Trans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R
Discrete Semiconductor Products

FDMC86012

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 30 V, 88 A, 2.7 MILLIOHMS, POWER 33, 8 PINS, SURFACE MOUNT

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onsemi-FDMC86012 MOSFETs Trans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R
Discrete Semiconductor Products

FDMC86012

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 30 V, 88 A, 2.7 MILLIOHMS, POWER 33, 8 PINS, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC86012
Current - Continuous Drain (Id) @ 25°C23 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]38 nC
Input Capacitance (Ciss) (Max) @ Vds5075 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)2.3 W, 54 W
Rds On (Max) @ Id, Vgs2.7 mOhm
Supplier Device PackagePower33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.72
10$ 3.13
100$ 2.23
500$ 1.84
1000$ 1.75
Digi-Reel® 1$ 4.72
10$ 3.13
100$ 2.23
500$ 1.84
1000$ 1.75
Tape & Reel (TR) 3000$ 1.75
NewarkEach (Supplied on Full Reel) 3000$ 2.22
6000$ 2.11
12000$ 1.90
18000$ 1.83
30000$ 1.76
ON SemiconductorN/A 1$ 0.65

Description

General part information

FDMC86324 Series

This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on)has been maintained to provide a sub logic-level device.