
Discrete Semiconductor Products
PBSS5160DS,115
ActiveNexperia USA Inc.
TRANS GP BJT PNP 60V 1A 700MW 6-PIN TSOP T/R
Deep-Dive with AI
Search across all available documentation for this part.

Discrete Semiconductor Products
PBSS5160DS,115
ActiveNexperia USA Inc.
TRANS GP BJT PNP 60V 1A 700MW 6-PIN TSOP T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS5160DS,115 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 770 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 150 |
| Frequency - Transition | 185 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-457, SC-74 |
| Power - Max [Max] | 420 mW |
| Qualification | AEC-Q100 |
| Supplier Device Package | 6-TSOP |
| Transistor Type | 2 PNP (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 330 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBSS5160 Series
PNP/PNP low VCEsatBreakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Documents
Technical documentation and resources