Zenode.ai Logo
Beta
SOT1118
Discrete Semiconductor Products

PBSS5160PAP,115

Active
Nexperia USA Inc.

60 V, 1 A PNP/PNP LOW VCESAT DOUBLE TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

SOT1118
Discrete Semiconductor Products

PBSS5160PAP,115

Active
Nexperia USA Inc.

60 V, 1 A PNP/PNP LOW VCESAT DOUBLE TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS5160PAP,115
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Frequency - Transition125 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]510 mW
QualificationAEC-Q100
Supplier Device Package6-HUSON (2x2)
Transistor Type2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic340 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.52
10$ 0.45
100$ 0.31
500$ 0.24
1000$ 0.20
Digi-Reel® 1$ 0.52
10$ 0.45
100$ 0.31
500$ 0.24
1000$ 0.20
N/A 2268$ 1.03
Tape & Reel (TR) 3000$ 0.15

Description

General part information

PBSS5160 Series

PNP/PNP low VCEsatBreakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.