Discrete Semiconductor Products

PBSS5160QAZ

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PBSS5160QA - 60 V, 1 A PNP LOW VCESAT (BISS) TRANSISTOR@EN-US DFN 3-PIN

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Discrete Semiconductor Products

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PBSS5160QA - 60 V, 1 A PNP LOW VCESAT (BISS) TRANSISTOR@EN-US DFN 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS5160QAZ

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	85
Frequency - Transition	150 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-XDFN Exposed Pad
Power - Max [Max]	325 mW
Qualification	AEC-Q100
Supplier Device Package	DFN1010D-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	460 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Transistor Type	Current - Collector (Ic) (Max) [Max]	Mounting Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Frequency - Transition	Grade	Qualification
Freescale Semiconductor - NXP PBSS5160T,215	PNP	1 A	Surface Mount	SC-59 SOT-23-3 TO-236-3	100 nA	400 mW	150 °C	60 V	330 mV	150 hFE	TO-236AB
Freescale Semiconductor - NXP PBSS5160TVL	PNP	1 A	Surface Mount	SC-59 SOT-23-3 TO-236-3	100 nA		150 °C	60 V	175 mV	200	TO-236AB	150 MHz
Freescale Semiconductor - NXP PBSS5160QAZ	PNP	1 A	Surface Mount	3-XDFN Exposed Pad	100 nA	325 mW	150 °C	60 V	460 mV	85	DFN1010D-3	150 MHz	Automotive	AEC-Q100
Freescale Semiconductor - NXP PBSS5160U,115	PNP	700 mA	Surface Mount	SC-70 SOT-323	100 nA	415 mW	150 °C	60 V	340 mV	150 hFE	SOT-323	185 MHz	Automotive	AEC-Q100

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General part information

Bipolar (BJT) Transistor PNP 60 V 1 A 150MHz 325 mW Surface Mount DFN1010D-3

Technical documentation and resources