
Discrete Semiconductor Products
PBSS5160TVL
ActiveNexperia USA Inc.
TRANS GP BJT PNP 60V 1A 1250MW 3-PIN SOT-23 T/R
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Discrete Semiconductor Products
PBSS5160TVL
ActiveNexperia USA Inc.
TRANS GP BJT PNP 60V 1A 1250MW 3-PIN SOT-23 T/R
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS5160TVL |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 200 |
| Frequency - Transition | 150 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Supplier Device Package | TO-236AB |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 175 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.06 | |
| Tape & Reel (TR) | 10000 | $ 0.05 | ||
| 30000 | $ 0.05 | |||
| 50000 | $ 0.04 | |||
| 100000 | $ 0.04 | |||
| 250000 | $ 0.04 | |||
Description
General part information
PBSS5160 Series
PNP/PNP low VCEsatBreakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Documents
Technical documentation and resources