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TO-236AB
Discrete Semiconductor Products

PBSS5160TVL

Active
Nexperia USA Inc.

TRANS GP BJT PNP 60V 1A 1250MW 3-PIN SOT-23 T/R

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TO-236AB
Discrete Semiconductor Products

PBSS5160TVL

Active
Nexperia USA Inc.

TRANS GP BJT PNP 60V 1A 1250MW 3-PIN SOT-23 T/R

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS5160TVL
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
Frequency - Transition150 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Supplier Device PackageTO-236AB
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic175 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.06
Tape & Reel (TR) 10000$ 0.05
30000$ 0.05
50000$ 0.04
100000$ 0.04
250000$ 0.04

Description

General part information

PBSS5160 Series

PNP/PNP low VCEsatBreakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

Documents

Technical documentation and resources