Specification	R6007RND3TL1

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17.5 nC
Input Capacitance (Ciss) (Max) @ Vds	460 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	96 W
Rds On (Max) @ Id, Vgs	940 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	7 V

R6007 Series

600V 7A, TO-252 (DPAK), PrestoMOS™ with integrated high-speed diode

Part	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs [Max]
Rohm Semiconductor R6007KNXC7G	620 mOhm	N-Channel	TO-220-3 Full Pack	600 V	Through Hole	470 pF	7 A	14.5 nC	10 V	5 V	150 °C	TO-220FM	20 V	46 W	MOSFET (Metal Oxide)
Rohm Semiconductor R6007ENX	620 mOhm	N-Channel	TO-220-3 Full Pack	600 V	Through Hole		7 A	20 nC	10 V		150 °C	TO-220FM	20 V	40 W	MOSFET (Metal Oxide)	390 pF
Rohm Semiconductor R6007JND3TL1		N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	Surface Mount	475 pF	7 A	17.5 nC	15 V	7 V		TO-252	30 V	96 W	MOSFET (Metal Oxide)		150 °C	-55 °C	780 mOhm
Rohm Semiconductor R6007RND3TL1	940 mOhm	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	Surface Mount		7 A	17.5 nC	15 V	7 V	150 °C	TO-252	30 V	96 W	MOSFET (Metal Oxide)	460 pF
Rohm Semiconductor R6007ENJTL	620 mOhm	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	Surface Mount		7 A	20 nC	10 V		150 °C	LPTS	20 V	40 W	MOSFET (Metal Oxide)	390 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.41
		10	$ 1.55
		25	$ 1.33
		100	$ 1.07
		250	$ 0.95
		500	$ 0.87
		1000	$ 0.81
	Digi-Reel®	1	$ 2.41
		10	$ 1.55
		25	$ 1.33
		100	$ 1.07
		250	$ 0.95
		500	$ 0.87
		1000	$ 0.81
	N/A	3017	$ 1.46
	Tape & Reel (TR)	2500	$ 0.33
Newark	Each (Supplied on Cut Tape)	1	$ 1.00

Description

General part information

R6007 Series

R6007JND3 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).

Documents

Technical documentation and resources

Explanation for Marking

Package Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

R6007RND3TL1

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R6007RND3TL1

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Technical Specifications

R6007 Series

Pricing

Description

R6007 Series

Documents

Explanation for Marking

Impedance Characteristics of Bypass Capacitor

Importance of Probe Calibration When Measuring Power: Deskew

MOSFET Gate Drive Current Setting for Motor Driving

θ<sub>JA</sub> and Ψ<sub>JT</sub>

List of Transistor Package Thermal Resistance

How to Use LTspice&reg; Models

What Is Thermal Design

About Flammability of Materials

Benefits given by PrestoMOS&trade; series for the Phase-Shift Full-Bridge

How to Use LTspice&reg; Models: Tips for Improving Convergence

Two-Resistor Model for Thermal Simulation

Report of SVHC under REACH Regulation

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Compliance of the RoHS directive

Part Explanation

Condition of Soldering / Land Pattern Reference

MOSFET Gate Resistor Setting for Motor Driving

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Notes for Calculating Power Consumption:Static Operation

TO-252_TL1 Taping Information

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Measurement Method and Usage of Thermal Resistance RthJC

Notes for Temperature Measurement Using Thermocouples

Basics of Thermal Resistance and Heat Dissipation

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Precautions When Measuring the Rear of the Package with a Thermocouple

Method for Monitoring Switching Waveform

R6007RND3 ESD Data

Package Dimensions

Calculation of Power Dissipation in Switching Circuit

What is a Thermal Model? (Transistor)

R6007RND3 Data Sheet

Temperature derating method for Safe Operating Area (SOA)

PCB Layout Thermal Design Guide

Moisture Sensitivity Level - Transistors

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Anti-Whisker formation - Transistors

About Export Regulations

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Types and Features of Transistors

Judgment Criteria of Thermal Evaluation

R6007 Series

How to Use LTspice® Models

Benefits given by PrestoMOS™ series for the Phase-Shift Full-Bridge

How to Use LTspice® Models: Tips for Improving Convergence