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Discrete Semiconductor Products

R6007KNXC7G

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Rohm Semiconductor

600V 7A TO-220FM, HIGH-SPEED SWITCHING POWER MOSFET

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Product thumbnail image
Discrete Semiconductor Products

R6007KNXC7G

Active
Rohm Semiconductor

600V 7A TO-220FM, HIGH-SPEED SWITCHING POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationR6007KNXC7G
Current - Continuous Drain (Id) @ 25°C7 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14.5 nC
Input Capacitance (Ciss) (Max) @ Vds470 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)46 W
Rds On (Max) @ Id, Vgs620 mOhm
Supplier Device PackageTO-220FM
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.93
50$ 1.12
100$ 1.08
500$ 0.57
1000$ 0.52
10000$ 0.52
NewarkEach 1$ 1.97
10$ 1.21
100$ 1.21
500$ 1.20
1000$ 1.20

Description

General part information

R6007RND3 Series

R6007JND3 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).

Documents

Technical documentation and resources

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Method for Monitoring Switching Waveform

Schematic Design & Verification

How to Create Symbols for PSpice Models

Models

Notes for Temperature Measurement Using Thermocouples

Thermal Design

Reliability Test Result

Manufacturing Data

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Thermal Design

ROHM Solution Simulator Power Device User's Guide for Inverter

Simulations

What is a Thermal Model? (Transistor)

Thermal Design

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

What Is Thermal Design

Thermal Design

Part Explanation

Application Note

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

White Paper

Two-Resistor Model for Thermal Simulation

Thermal Design

R6007KNX Data Sheet

Data Sheet

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Package Dimensions

Package Information

Inner Structure

Package Information

Measurement Method and Usage of Thermal Resistance RthJC

Thermal Design

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Thermal Design

Types and Features of Transistors

Application Note

About Export Regulations

Export Information

Constitution Materials List

Environmental Data

R6007KNX ESD Data

Characteristics Data

Moisture Sensitivity Level - Transistors

Package Information

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Thermal Design

About Flammability of Materials

Environmental Data

Explanation for Marking

Package Information

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Judgment Criteria of Thermal Evaluation

Thermal Design

PCB Layout Thermal Design Guide

Thermal Design

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

List of Transistor Package Thermal Resistance

Thermal Design

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification