Discrete Semiconductor Products

R6007ENJTL

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TRANS MOSFET N-CH 600V ±7A 3-PIN TO-263 T/R

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DocumentsHow to Use the Thermal Resistance and Thermal Characteristics Parameters Power Eco Family: Overview of ROHM's Power Semiconductor Lineup +32

Discrete Semiconductor Products

R6007ENJTL

Active

Rohm Semiconductor

TRANS MOSFET N-CH 600V ±7A 3-PIN TO-263 T/R

Deep-Dive with AI

DocumentsHow to Use the Thermal Resistance and Thermal Characteristics Parameters Power Eco Family: Overview of ROHM's Power Semiconductor Lineup +32

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6007ENJTL

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	390 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	620 mOhm
Supplier Device Package	LPTS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

R6007RND3 Series

600V 7A, TO-252 (DPAK), PrestoMOS™ with integrated high-speed diode

Part	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Rohm Semiconductor R6007KNXC7G	620 mOhm	MOSFET (Metal Oxide)	10 V	46 W	TO-220-3 Full Pack	600 V	7 A	470 pF	N-Channel	14.5 nC	150 °C	Through Hole	TO-220FM	20 V
Rohm Semiconductor R6007ENX	620 mOhm	MOSFET (Metal Oxide)	10 V	40 W	TO-220-3 Full Pack	600 V	7 A	390 pF	N-Channel		150 °C	Through Hole	TO-220FM	20 V	20 nC
Rohm Semiconductor R6007JND3TL1		MOSFET (Metal Oxide)	15 V	96 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	7 A	475 pF	N-Channel			Surface Mount	TO-252	30 V		780 mOhm	-55 °C	150 °C	7 V	17.5 nC
Rohm Semiconductor R6007RND3TL1	940 mOhm	MOSFET (Metal Oxide)	15 V	96 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	7 A		N-Channel		150 °C	Surface Mount	TO-252	30 V					7 V	17.5 nC	460 pF
Rohm Semiconductor R6007ENJTL	620 mOhm	MOSFET (Metal Oxide)	10 V	40 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 V	7 A	390 pF	N-Channel		150 °C	Surface Mount	LPTS	20 V	20 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.28
		10	$ 1.65
		100	$ 1.20
		500	$ 0.97
	Digi-Reel®	1	$ 2.28
		10	$ 1.65
		100	$ 1.20
		500	$ 0.97
	Tape & Reel (TR)	1000	$ 0.89
		2000	$ 0.81
		3000	$ 0.79
		5000	$ 0.79
Newark	Each (Supplied on Cut Tape)	1	$ 2.60
		10	$ 1.86
		25	$ 1.68
		50	$ 1.51
		100	$ 1.33
		300	$ 1.28
		500	$ 1.01
		1000	$ 0.90

Description

General part information

R6007RND3 Series

R6007JND3 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).