Discrete Semiconductor Products

EPC2100ENGRT

Obsolete

EPC

GANFET 2 N-CH 30V 9.5A/38A DIE

Discrete Semiconductor Products

EPC2100ENGRT

Obsolete

EPC

GANFET 2 N-CH 30V 9.5A/38A DIE

Specifications Series Pricing CAD Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	EPC2100ENGRT

Channel Count	2
Configuration	N-Channel
Configuration - Features	Half Bridge
Current - Continuous Drain (Id) (Ta)	10 A
Current - Continuous Drain (Id) (Ta) (2)	40 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	19 nC, 4.9 nC
Input Capacitance (Ciss) (Max)	475 pF, 1960 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	Die
Package Name	Die
Rds On (Max)	8.2 mOhm, 2.1 mOhm
Technology	GaNFET (Gallium Nitride)
Vgs(th) (Max)	2.5 V, 2.5 V

EPC210 Series

Part	Technology	Package / Case	Gate Charge (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Package Name	Channel Count	Configuration - Features	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Typical)	Mounting Type	Current - Continuous Drain (Id) (Tj)	Current - Continuous Drain (Id)	Current - Continuous Drain (Id) (Maximum)	Package Width	Package Length	Current - Continuous Drain (Id) (Ta) (2)	Current - Continuous Drain (Id) (Ta)
EPC EPC2105	GaNFET (Gallium Nitride)	Die	2.5 nC	2.5 V 2.5 V	300 pF 1100 pF	3.4 mOhm 14.5 mOhm	Die	2	Half Bridge	N-Channel	80 V	-40 °C	150 °C	9.5 A	Surface Mount
EPC EPC2102ENGRT	GaNFET (Gallium Nitride)	Die	6.8 nC	2.5 V	830 pF	4.4 mOhm	Die	2	Half Bridge	N-Channel	60 V	-40 °C	150 °C		Surface Mount	23 A
EPC EPC2106ENGRT	GaNFET (Gallium Nitride)	Die	0.73 nC	2.5 V	75 pF	70 mOhm	Die	2	Half Bridge	N-Channel	100 V	-40 °C	150 °C		Surface Mount		1.7 A
EPC EPC2104	GaNFET (Gallium Nitride)	Die	7 nC	2.5 V	800 pF	6.3 mOhm	Die	2	Half Bridge	N-Channel	100 V	-40 °C	150 °C		Surface Mount		23 A
EPC EPC2103ENGRT	GaNFET (Gallium Nitride)	Die	6.5 nC	2.5 V		5.5 mOhm	Die	2	Half Bridge	N-Channel	80 V				Surface Mount		23 A
EPC EPC2107	GaNFET (Gallium Nitride)	9-VFBGA	0.044 nC 0.16 nC	2.5 V 2.5 V	7 pF 16 pF	3.3 Ohm 320 mOhm	9-BGA	3	Half Bridge Synchronous Bootstrap	N-Channel	100 V	-40 °C	150 °C	1.7 A	Surface Mount			500 mA	1.35 mm	1.35 mm
EPC EPC2105ENGRT	GaNFET (Gallium Nitride)	Die	2.5 nC	2.5 V	300 pF	14.5 mOhm	Die	2	Half Bridge	N-Channel	80 V	-40 °C	150 °C		Surface Mount		9.5 A
EPC EPC2103	GaNFET (Gallium Nitride)	Die	6.5 nC	2.5 V	760 pF	5.5 mOhm	Die	2	Half Bridge	N-Channel	80 V	-40 °C	150 °C		Surface Mount		28 A
EPC EPC2100ENGRT	GaNFET (Gallium Nitride)	Die	4.9 nC 19 nC	2.5 V 2.5 V	475 pF 1960 pF	2.1 mOhm 8.2 mOhm	Die	2	Half Bridge	N-Channel	30 V	-40 °C	150 °C		Surface Mount						40 A	10 A
EPC EPC2104ENGRT	GaNFET (Gallium Nitride)	Die	7 nC	2.5 V	800 pF	6.3 mOhm	Die	2	Half Bridge	N-Channel	100 V	-40 °C	150 °C		Surface Mount		23 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Tape & Reel (TR)	500	$ 3.80	<4d

CAD

3D models and CAD resources for this part

Description

General part information

EPC210 Series

Mosfet Array 30V 10A (Ta), 40A (Ta) Surface Mount Die

Documents

Technical documentation and resources

EPC2100ENGRT | Datasheet

Datasheet