Discrete Semiconductor Products

EPC2105ENGRT

Unknown

EPC

GANFET 2N-CH 80V 9.5A DIE

Discrete Semiconductor Products

EPC2105ENGRT

Unknown

EPC

GANFET 2N-CH 80V 9.5A DIE

Specifications Series Pricing CAD Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	EPC2105ENGRT

Channel Count	2
Configuration	N-Channel
Configuration - Features	Half Bridge
Current - Continuous Drain (Id)	9.5 A
Drain to Source Voltage (Vdss)	80 V
Gate Charge (Max)	2.5 nC
Input Capacitance (Ciss) (Max)	300 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	Die
Package Name	Die
Rds On (Max)	14.5 mOhm
Technology	GaNFET (Gallium Nitride)
Vgs(th) (Max)	2.5 V

EPC210 Series

Part	Technology	Package / Case	Gate Charge (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Package Name	Channel Count	Configuration - Features	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Typical)	Mounting Type	Current - Continuous Drain (Id) (Tj)	Current - Continuous Drain (Id)	Current - Continuous Drain (Id) (Maximum)	Package Width	Package Length	Current - Continuous Drain (Id) (Ta) (2)	Current - Continuous Drain (Id) (Ta)
EPC EPC2105	GaNFET (Gallium Nitride)	Die	2.5 nC	2.5 V 2.5 V	300 pF 1100 pF	3.4 mOhm 14.5 mOhm	Die	2	Half Bridge	N-Channel	80 V	-40 °C	150 °C	9.5 A	Surface Mount
EPC EPC2102ENGRT	GaNFET (Gallium Nitride)	Die	6.8 nC	2.5 V	830 pF	4.4 mOhm	Die	2	Half Bridge	N-Channel	60 V	-40 °C	150 °C		Surface Mount	23 A
EPC EPC2106ENGRT	GaNFET (Gallium Nitride)	Die	0.73 nC	2.5 V	75 pF	70 mOhm	Die	2	Half Bridge	N-Channel	100 V	-40 °C	150 °C		Surface Mount		1.7 A
EPC EPC2104	GaNFET (Gallium Nitride)	Die	7 nC	2.5 V	800 pF	6.3 mOhm	Die	2	Half Bridge	N-Channel	100 V	-40 °C	150 °C		Surface Mount		23 A
EPC EPC2103ENGRT	GaNFET (Gallium Nitride)	Die	6.5 nC	2.5 V		5.5 mOhm	Die	2	Half Bridge	N-Channel	80 V				Surface Mount		23 A
EPC EPC2107	GaNFET (Gallium Nitride)	9-VFBGA	0.044 nC 0.16 nC	2.5 V 2.5 V	7 pF 16 pF	3.3 Ohm 320 mOhm	9-BGA	3	Half Bridge Synchronous Bootstrap	N-Channel	100 V	-40 °C	150 °C	1.7 A	Surface Mount			500 mA	1.35 mm	1.35 mm
EPC EPC2105ENGRT	GaNFET (Gallium Nitride)	Die	2.5 nC	2.5 V	300 pF	14.5 mOhm	Die	2	Half Bridge	N-Channel	80 V	-40 °C	150 °C		Surface Mount		9.5 A
EPC EPC2103	GaNFET (Gallium Nitride)	Die	6.5 nC	2.5 V	760 pF	5.5 mOhm	Die	2	Half Bridge	N-Channel	80 V	-40 °C	150 °C		Surface Mount		28 A
EPC EPC2100ENGRT	GaNFET (Gallium Nitride)	Die	4.9 nC 19 nC	2.5 V 2.5 V	475 pF 1960 pF	2.1 mOhm 8.2 mOhm	Die	2	Half Bridge	N-Channel	30 V	-40 °C	150 °C		Surface Mount						40 A	10 A
EPC EPC2104ENGRT	GaNFET (Gallium Nitride)	Die	7 nC	2.5 V	800 pF	6.3 mOhm	Die	2	Half Bridge	N-Channel	100 V	-40 °C	150 °C		Surface Mount		23 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

CAD

3D models and CAD resources for this part

Description

General part information

EPC210 Series

Mosfet Array 80V 9.5A Surface Mount Die

Documents

Technical documentation and resources

EPC2105ENGRT | Datasheet

Datasheet