Discrete Semiconductor Products

2N2919U

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Microchip Technology

DUAL SMALL-SIGNAL BJT LCC-6 ROHS COMPLIANT: YES

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DocumentsProduct Change Notice EN

Discrete Semiconductor Products

2N2919U

Active

Microchip Technology

DUAL SMALL-SIGNAL BJT LCC-6 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsProduct Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N2919U

Current - Collector (Ic) (Max) [Max]	30 mA
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Mounting Type	Surface Mount
Operating Temperature	200 °C
Package / Case	6-SMD, No Lead
Power - Max [Max]	350 mW
Supplier Device Package	U
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

JANTX2N2919L-Dual-Transistor Series

NPN Silicon Dual 60V, 0.03A

Part	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Grade	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	Mounting Type	Qualification
Microchip Technology JANTX2N2919L	10 µA	200 °C	Military	60 V	TO-78-6 Metal Can	150	30 mA	350 mW	300 mV	2 NPN (Dual)	TO-78-6	Through Hole	MIL-PRF-19500/355
Microchip Technology JAN2N2919U/TR	10 µA	200 °C	Military	60 V	6-SMD No Lead	150	30 mA	350 mW	300 mV	2 NPN (Dual)	U	Surface Mount	MIL-PRF-19500/355
Microchip Technology 2N2919L	10 µA	200 °C		60 V	TO-78-6 Metal Can	150	30 mA	350 mW	300 mV	2 NPN (Dual)	TO-78-6	Through Hole
Microchip Technology 2N2919U	10 µA	200 °C		60 V	6-SMD No Lead	150	30 mA	350 mW	300 mV	2 NPN (Dual)	U	Surface Mount
Microchip Technology JAN2N2919

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 47.56
Newark	Each	100	$ 47.57
		500	$ 45.74

Description

General part information

JANTX2N2919L-Dual-Transistor Series

This specification covers the performance requirements for two electrically isolated, matched NPN radiation hardened silicon 2N2919 and 2N2920, unitized transistors as one dual unit. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/355, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device (die), as specified in MIL-PRF-19500/355. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L", "R", "F", "G" and "H") are provided for JANTXV, JANS, JANHC, JANKC, JANHCD, and JANKCD product assurance levels. The device package for the encapsulated device type are as follows: similar to TO-78 and surface mount version. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/355.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet