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BC856BMBYL
Discrete Semiconductor Products

NX3008PBKMB,315

Obsolete
Nexperia USA Inc.

MOSFET P-CH 30V 300MA DFN1006B-3

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DocumentsDatasheet
BC856BMBYL
Discrete Semiconductor Products

NX3008PBKMB,315

Obsolete
Nexperia USA Inc.

MOSFET P-CH 30V 300MA DFN1006B-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationNX3008PBKMB,315
Current - Continuous Drain (Id) @ 25°C300 mA
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.72 nC
Input Capacitance (Ciss) (Max) @ Vds46 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN, SOT-883, SC-101
Power Dissipation (Max)2.7 W
Power Dissipation (Max)360 mW
Rds On (Max) @ Id, Vgs4.1 Ohm
Supplier Device PackageDFN1006B-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 10193$ 0.03
N/A 0$ 0.04
644$ 0.02

Description

General part information

NX3008 Series

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources