
Catalog
30 V, single N-channel Trench MOSFET

30 V, single N-channel Trench MOSFET
30 V, single N-channel Trench MOSFET
| Part | Package / Case | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Grade | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Power - Max [Max] | Qualification | FET Feature | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] [x] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Freescale Semiconductor - NXP | 6-TSSOP SC-88 SOT-363 | Surface Mount | 4.1 Ohm | 1.1 V | 30 V | 200 mA | Automotive | MOSFET (Metal Oxide) | 0.75 nC | 2 P-Channel | 46 pF | 445 mW | AEC-Q101 | Logic Level Gate | -55 °C | 150 °C | 6-TSSOP | |||||||
Freescale Semiconductor - NXP | SOT-563 SOT-666 | Surface Mount | 4.1 Ohm | 1.1 V | 30 V | 220 mA | Automotive | MOSFET (Metal Oxide) | 0.72 nC | 2 P-Channel | 46 pF | 500 mW | AEC-Q101 | Logic Level Gate | -55 °C | 150 °C | SOT-666 | |||||||
Freescale Semiconductor - NXP | SC-70 SOT-323 | Surface Mount | 1.4 Ohm | 1.1 V | 30 V | 350 mA | Automotive | MOSFET (Metal Oxide) | 0.68 nC | 50 pF | AEC-Q101 | -55 °C | 150 °C | SOT-323 | 8 V | 1.8 V 4.5 V | N-Channel | 260 mW 830 mW | ||||||
Freescale Semiconductor - NXP | SC-59 SOT-23-3 TO-236-3 | Surface Mount | 1.4 Ohm | 1.1 V | 30 V | 400 mA | Automotive | MOSFET (Metal Oxide) | 0.68 nC | 50 pF | AEC-Q101 | -55 °C | 150 °C | TO-236AB | 8 V | 1.8 V 4.5 V | N-Channel | 1.14 W 350 mW | ||||||
Freescale Semiconductor - NXP | 6-TSSOP SC-88 SOT-363 | Surface Mount | 1.4 Ohm | 1.1 V | 30 V | 200 mA 350 mA | Automotive | MOSFET (Metal Oxide) | N and P-Channel | 50 pF | 445 mW | AEC-Q101 | Logic Level Gate | -55 °C | 150 °C | 6-TSSOP | 0.68 nC | |||||||
Freescale Semiconductor - NXP | 3-XFDFN | Surface Mount | 4.1 Ohm | 1.1 V | 30 V | 300 mA | MOSFET (Metal Oxide) | -55 °C | 150 °C | DFN1006B-3 | 8 V | 1.8 V 4.5 V | P-Channel | 2.7 W 360 mW | 0.72 nC | 46 pF | ||||||||
Freescale Semiconductor - NXP | SOT-563 SOT-666 | Surface Mount | 1.4 Ohm | 1.1 V | 30 V | 400 mA | Automotive | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 50 pF | 500 mW | AEC-Q101 | Logic Level Gate | -55 °C | 150 °C | SOT-666 | 0.68 nC | |||||||
Freescale Semiconductor - NXP | SC-70 SOT-323 | Surface Mount | 4.1 Ohm | 1.1 V | 30 V | 200 mA | Automotive | MOSFET (Metal Oxide) | AEC-Q101 | -55 °C | 150 °C | SOT-323 | 8 V | 2.5 V 4.5 V | P-Channel | 260 mW 830 mW | 0.72 nC | 46 pF | ||||||
Freescale Semiconductor - NXP | 3-XFDFN | Surface Mount | 1.4 Ohm | 1.1 V | 30 V | 530 mA | MOSFET (Metal Oxide) | 0.68 nC | 50 pF | -55 °C | 150 °C | DFN1006B-3 | 8 V | 1.8 V 4.5 V | N-Channel | 2.7 W 360 mW |