Specification	NX3008NBKW,115

Current - Continuous Drain (Id) @ 25°C	350 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.68 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	50 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-323, SC-70
Power Dissipation (Max)	260 mW, 830 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1.1 V

NX3008 Series

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

Part	Grade	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Power - Max [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	FET Feature	Package / Case	Configuration	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max)	FET Type	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Power Dissipation (Max)	Operating Temperature
Nexperia USA Inc. NX3008PBKS,115	Automotive	200 mA	6-TSSOP	4.1 Ohm	MOSFET (Metal Oxide)	445 mW	30 V	1.1 V	Surface Mount	150 °C	-55 °C	Logic Level Gate	6-TSSOP SC-88 SOT-363	2 P-Channel (Dual)	AEC-Q101	46 pF	0.75 nC
Nexperia USA Inc. NX3008PBKV,115	Automotive	220 mA	SOT-666	4.1 Ohm	MOSFET (Metal Oxide)	500 mW	30 V	1.1 V	Surface Mount	150 °C	-55 °C	Logic Level Gate	SOT-563 SOT-666	2 P-Channel (Dual)	AEC-Q101	46 pF		0.72 nC
Nexperia USA Inc. NX3008NBKW,115	Automotive	350 mA	SOT-323	1.4 Ohm	MOSFET (Metal Oxide)		30 V	1.1 V	Surface Mount	150 °C	-55 °C		SC-70 SOT-323		AEC-Q101			0.68 nC	1.8 V	4.5 V	260 mW 830 mW	N-Channel	8 V	50 pF
Nexperia USA Inc. NX3008NBK,215	Automotive	400 mA	TO-236AB	1.4 Ohm	MOSFET (Metal Oxide)		30 V	1.1 V	Surface Mount	150 °C	-55 °C		SC-59 SOT-23-3 TO-236-3		AEC-Q101			0.68 nC	1.8 V	4.5 V	1.14 W 350 mW	N-Channel	8 V	50 pF
Nexperia USA Inc. NX3008CBKS,115	Automotive	200 mA 350 mA	6-TSSOP	1.4 Ohm	MOSFET (Metal Oxide)	445 mW	30 V	1.1 V	Surface Mount	150 °C	-55 °C	Logic Level Gate	6-TSSOP SC-88 SOT-363	N and P-Channel	AEC-Q101			0.68 nC						50 pF
Nexperia USA Inc. NX3008PBKMB,315		300 mA	DFN1006B-3	4.1 Ohm	MOSFET (Metal Oxide)		30 V	1.1 V	Surface Mount	150 °C	-55 °C		3-XFDFN SC-101 SOT-883			46 pF	0.72 nC		1.8 V	4.5 V		P-Channel	8 V		2.7 W	360 mW
Nexperia USA Inc. NX3008NBKV,115	Automotive	400 mA	SOT-666	1.4 Ohm	MOSFET (Metal Oxide)	500 mW	30 V	1.1 V	Surface Mount	150 °C	-55 °C	Logic Level Gate	SOT-563 SOT-666	2 N-Channel (Dual)	AEC-Q101			0.68 nC						50 pF
Nexperia USA Inc. NX3008PBKW,115	Automotive	200 mA	SOT-323	4.1 Ohm	MOSFET (Metal Oxide)		30 V	1.1 V	Surface Mount	150 °C	-55 °C		SC-70 SOT-323		AEC-Q101	46 pF	0.72 nC		2.5 V	4.5 V	260 mW 830 mW	P-Channel	8 V
Nexperia USA Inc. NX3008NBKVL	Automotive	400 mA	TO-236AB	1.4 Ohm	MOSFET (Metal Oxide)		30 V	1.1 V	Surface Mount				SC-59 SOT-23-3 TO-236-3		AEC-Q101			0.68 nC	1.8 V	4.5 V	1.14 W 350 mW	N-Channel	8 V	50 pF			150 °C
Nexperia USA Inc. NX3008NBKMB,315		530 mA	DFN1006B-3	1.4 Ohm	MOSFET (Metal Oxide)		30 V	1.1 V	Surface Mount	150 °C	-55 °C		3-XFDFN					0.68 nC	1.8 V	4.5 V		N-Channel	8 V	50 pF	2.7 W	360 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.25
		10	$ 0.17
		100	$ 0.08
		500	$ 0.07
		1000	$ 0.05
	Digi-Reel®	1	$ 0.25
		10	$ 0.17
		100	$ 0.08
		500	$ 0.07
		1000	$ 0.05
	N/A	0	$ 0.34
	Tape & Reel (TR)	3000	$ 0.04
		6000	$ 0.04
		9000	$ 0.03

Description

General part information

NX3008 Series

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.